Iridium Sputtering Target
High-purity iridium sputtering targets for semiconductor manufacturing, optical coatings and advanced thin-film deposition.
ASTM B338 Grade 2 CP titanium tube with balanced ductility & corrosion resistance, custom U-bend/coil shapes for power, marine and chemical heat exchange equipment.
Commercially Pure CP Seamless & Welded Tube for Condensers, Evaporators & Heat Exchangers
ASTM B338 Grade 2 titanium tubing, UNS R50400, is unalloyed commercially pure (CP) seamless and welded tube complying with ASTM B338-17(R21) / ASME SB338 specification. It is the most universal general-purpose titanium grade engineered for surface condensers, evaporators and all types of industrial heat exchangers. Grade 2 balances moderate tensile strength, superior ductility, outstanding formability and excellent chloride corrosion resistance. The titanium base content is calculated by mass difference after deducting all interstitial and trace impurity elements; oxygen content is the core factor determining its mechanical performance.
| Element | Maximum Allowable Content | Technical Note |
|---|---|---|
| Nitrogen (N) | 0.03 | Interstitial impurity to avoid metal embrittlement |
| Carbon (C) | 0.08 | Limit intergranular brittle phase formation |
| Hydrogen (H) | 0.015 | Final product test; lower H limit negotiable with manufacturer |
| Iron (Fe) | 0.30 | Main residual metallic impurity |
| Oxygen (O) | 0.25 | Key element controlling tensile & yield strength |
| Single Residual Element | 0.10 max each | Unintentional trace metal impurities (Al, V, Cr, Ni etc.) |
| Total Residual Elements | 0.40 max total | Sum of all residual trace metals |
| Titanium (Ti) | Balance | Calculated by subtracting all other element percentages |
A: Full chemical analysis report is required for each heat batch of raw material.
B: Lower hydrogen content can be agreed between buyer and manufacturer via written purchase order.
C: Hydrogen test must be performed on finished tubing, not raw billet.
D: Single residual elements below 0.1% do not need separate reporting.
E: Residual elements refer to unintended trace metals generated during smelting, including Al, V, Sn, Cr, Mo, Nb, Zr, Hf, Ru, Pd, Cu, Si, Co, Ta, Ni, Mn, W.
F: Purchasers can specify targeted residual testing requirements on orders.
G: Titanium mass percentage is calculated by difference method.
| Performance Item | Minimum Standard Value | Range Limit |
|---|---|---|
| Tensile Strength | 50 ksi (345 MPa) | No upper limit specified |
| 0.2% Offset Yield Strength | 40 ksi (275 MPa) | Max 65 ksi (450 MPa) |
| Elongation (2in / 50mm gauge length) | 20% | Minimum ductility for tube sheet expansion |
| Flaring Test Inner Diameter Expansion Rate | 20% | Mandatory heat exchanger ductility inspection |
Shell and Tube Heat Exchanger fitted with thin-wall titanium tubes, featuring high corrosion resistance and excellent heat transfer performance.
Similar to commercially pure titanium Grades 1 and 3, ASTM B338 Grade 2 titanium exhibits an alpha (α) crystal structure at room temperature, which is hexagonal close-packed (HCP).
885°C [1625°F]
890°C [1635°F]913°C [1675°F]
Engineering Significance: The α-phase stability of Grade 2 titanium at service temperatures ensures excellent ductility, weldability, and corrosion resistance, making it the preferred choice for heat exchangers, condensers, and seawater piping systems.
To ensure reliable performance in demanding industrial environments, every iridium crucible is manufactured under strict quality control procedures and inspected before delivery.
Iridium is a platinum group metal distinguished by its exceptional physical and chemical stability. With a melting point of 2446°C, it remains structurally stable under extreme thermal conditions where most metals fail. Its outstanding resistance to aggressive chemicals further enhances its durability in the most demanding industrial environments.
These properties make iridium an ideal material for sputtering targets, where consistent performance under extreme temperatures is critical. Its high density and hardness promote the formation of thin films with excellent structural integrity—essential for the production of reliable, long-lifetime semiconductor devices.
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